| PART |
Description |
Maker |
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| KH600 KH600AI |
1GHz, Differential Input/Output Amplifier
|
Fairchild Semiconductor
|
| KH600 KH600AI |
1GHz, Differential Input/Output Amplifier
|
Cadeka Microcircuits LLC.
|
| 74LVT162245B 74LVT162245BDGG 74LVT162245BDL VT1622 |
3.3V LVT 16-bit transceiver with 30ohm termination resistors 3-State
3.3V LVT 16-bit transceiver with 30Ω termination resistors (3-State)(30Ω终端电阻3.3V LVT 16位收发器(三)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| SY89230U SY89231U SY89229U SY89228UMG SY89228UMGTR |
1GHz Precision, LVPECL ÷3, ÷5 Clock Divider with Fail-Safe Input and Internal Termination
1GHz Precision, LVPECL 梅3, 梅5 Clock Divider with Fail-Safe Input and Internal Termination
1GHz Precision, LVPECL ±3, ±5 Clock Divider with Fail-Safe Input and Internal Termination
|
Micrel Semiconductor
|
| 74LVT20 74LVT20D 74LVT20DB 74LVT20PW 74LVT20PWDH |
8-Channel Analog Multiplexer/Demultiplexer with Injection-Current Effect Control 16-SOIC -40 to 125 LVT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
4-Line To 10-Line Decoders (1 of 10) 16-SO -40 to 85
3.3V Dual 4-input NAND gate
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| BF1009 Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
From old datasheet system
Silicon N-Channel MOSFET Tetrode (For low noise high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| D2031UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
